CHEMICAL VAPOUR DEPOSITION OF SILICON CARBIDE: AN X-RAY DIFFRACTION STUDY.

被引：0
|
作者：
Sibieude, F. [1 ]
Benezech, G. [1 ]
机构：
[1] CNRS, Font Romeu, Fr, CNRS, Font Romeu, Fr
来源：
Journal of Materials Science | 1988年 / 231卷 / 05期
关键词：
CHEMICAL REACTIONS - Reaction Kinetics - CRYSTALLIZATION - STRAIN - STRESSES - X-RAY ANALYSIS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Low-pressure chemical vapour deposition of silicon carbide from tetramethyl silane pyrolysis was studied by X-ray diffractometry. In situ measurements at high temperature gave kinetic information. The crystallization state, grain size, microstrains and residual macrostresses were measured at room temperature.
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页码：1632 / 1636
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