CHEMICAL VAPOUR DEPOSITION OF SILICON CARBIDE: AN X-RAY DIFFRACTION STUDY.

被引：0

作者：

Sibieude, F. ^{[1
]}

Benezech, G. ^{[1
]}

机构：

[1] CNRS, Font Romeu, Fr, CNRS, Font Romeu, Fr

来源：

Journal of Materials Science | 1988年 / 231卷 / 05期

关键词：

CHEMICAL REACTIONS - Reaction Kinetics - CRYSTALLIZATION - STRAIN - STRESSES - X-RAY ANALYSIS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Low-pressure chemical vapour deposition of silicon carbide from tetramethyl silane pyrolysis was studied by X-ray diffractometry. In situ measurements at high temperature gave kinetic information. The crystallization state, grain size, microstrains and residual macrostresses were measured at room temperature.

引用

页码：1632 / 1636

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