Possible relationship between Schottky barrier heights and adhesion energies of metal/semiconductor or insulator interfaces

被引：0
|
作者：
Li, Jianguo [1 ]
机构：
[1] Technical Univ Berlin, Berlin, Germany
来源：
Rare Metals | 1994年 / 13卷 / 01期
关键词：
Crystals - Interfacial energy - Semiconductor materials - Surface phenomena;
D O I：
暂无
中图分类号：
O48 [固体物理学];
学科分类号：
070205 ; 0805 ; 080502 ; 0809 ;
摘要：
A possible relationship between Schottky barrier heights and adhesion energies of different nonreactive metal/semiconductor or insulator interfaces was presented. Various experimental evidences further supporting such a relationship were briefly exploited. The consequence indicated by such a relationship on the understanding of metal/ceramic interfaces was stressed.
引用
收藏
页码：7 / 12
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