Possible relationship between Schottky barrier heights and adhesion energies of metal/semiconductor or insulator interfaces

被引：0
|
作者：
Li, Jianguo [1 ]
机构：
[1] Technical Univ Berlin, Berlin, Germany
来源：
Rare Metals | 1994年 / 13卷 / 01期
关键词：
Crystals - Interfacial energy - Semiconductor materials - Surface phenomena;
D O I：
暂无
中图分类号：
O48 [固体物理学];
学科分类号：
070205 ; 0805 ; 080502 ; 0809 ;
摘要：
A possible relationship between Schottky barrier heights and adhesion energies of different nonreactive metal/semiconductor or insulator interfaces was presented. Various experimental evidences further supporting such a relationship were briefly exploited. The consequence indicated by such a relationship on the understanding of metal/ceramic interfaces was stressed.
引用
收藏
页码：7 / 12
相关论文
共 50 条
  • [21] Metal-induced gap states and Schottky barrier heights at nonreactive GaN/noble-metal interfaces
    Picozzi, S
    Continenza, A
    Satta, G
    Massidda, S
    Freeman, AJ
    PHYSICAL REVIEW B, 2000, 61 (24) : 16736 - 16742
  • [22] Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes
    Chand, Subhash
    Bala, Saroj
    PHYSICA B-CONDENSED MATTER, 2007, 390 (1-2) : 179 - 184
  • [23] Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
    Lin, HC
    Wang, MF
    Lu, CY
    Huang, TY
    SOLID-STATE ELECTRONICS, 2003, 47 (02) : 247 - 251
  • [24] Self-powered silicon metal-semiconductor-metal photodetector based on asymmetric Schottky barrier heights
    Kim, You Jin
    Kumar, Mondal Ramit
    Kumar, Ghimire Mohan
    Kim, Munho
    APPLIED PHYSICS LETTERS, 2023, 123 (25)
  • [25] SCHOTTKY-BARRIER FORMATION AT SINGLE-CRYSTAL METAL-SEMICONDUCTOR INTERFACES
    TUNG, RT
    PHYSICAL REVIEW LETTERS, 1984, 52 (06) : 461 - 464
  • [26] Ab initio studies on Schottky barrier heights at metal gate/LaAlO3(001) interfaces
    Dong, Y. F.
    Mi, Y. Y.
    Feng, Y. P.
    Huan, A. C. H.
    Wang, S. J.
    APPLIED PHYSICS LETTERS, 2006, 89 (12)
  • [27] The effect of series resistance on the relationship between barrier heights and ideality factors of inhomogeneous Schottky barrier diodes
    Akkiliç, K
    Aydin, ME
    Türüt, A
    PHYSICA SCRIPTA, 2004, 70 (06) : 364 - 367
  • [28] Schottky barrier heights and mechanism of charge transfer at metal-Bi2OS2 interfaces
    Zhang, Xiaodong
    Feng, Liping
    Zhong, Shichen
    Ye, Yuanming
    Pan, Haixi
    Liu, Pengfei
    Zheng, Xiaoqi
    Li, Huanyong
    Qu, Mingyang
    Wang, Xitong
    SCIENCE CHINA-MATERIALS, 2023, 66 (02) : 811 - 818
  • [29] Evolution of Schottky barrier heights at Ni/HfO2 interfaces
    Li, Q.
    Dong, Y. F.
    Wang, S. J.
    Chai, J. W.
    Huan, A. C. H.
    Feng, Y. P.
    Ong, C. K.
    APPLIED PHYSICS LETTERS, 2006, 88 (22)
  • [30] RELATIONSHIP BETWEEN INTERFACIAL SUPERSTRUCTURES AND SCHOTTKY-BARRIER HEIGHTS OF SB/GAAS CONTACTS
    HIROSE, K
    AKIMOTO, K
    HIROSAWA, I
    MIZUKI, J
    MIZUTANI, T
    MATSUI, J
    PHYSICAL REVIEW B, 1991, 43 (05): : 4538 - 4540
12345