Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

被引:0
|
作者
机构
[1] [1,Voogt, F.C.
[2] Ishihara, R.
[3] Tichelaar, F.D.
来源
Voogt, F.C. (frans.voogt@philips.com) | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] CHARACTERIZATION OF THIN SILICON OXYNITRIDE FILMS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
    XU, XL
    MCLARTY, PK
    BRUSH, H
    MISRA, V
    WORTMAN, JJ
    HARRIS, GS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (10) : 2970 - 2974
  • [42] CHARACTERIZATION OF SEMIINSULATING POLYCRYSTALLINE SILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
    CHAO, TS
    LEE, CL
    LEI, TF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (09) : 2645 - 2648
  • [43] Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposition
    Voutsas, AT
    Hatalis, MK
    Boyce, J
    Chiang, A
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) : 6999 - 7006
  • [44] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF BPSG FILMS
    JENKINS, GM
    BULLERWELL, JM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C405 - C405
  • [45] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SIOX FILMS
    ABERNATHEY, J
    JOHNSON, D
    NESBIT, L
    CAMPBELL, D
    LAM, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C222 - C222
  • [46] Low-pressure chemical vapor deposition of GaN epitaxial films
    Topf, M
    Steude, G
    Fischer, S
    Kriegseis, W
    Dirnstorfer, I
    Meister, D
    Meyer, BK
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 330 - 334
  • [47] LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF TANTALUM PENTOXIDE THIN-LAYERS
    BURTE, EP
    RAUSCH, N
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 : 425 - 429
  • [48] Thickness effects on microstructural evolution of low-pressure-chemical-vapor-deposited amorphous silicon films during excimer-laser-induced crystallization
    Hsieh, IC
    Wu, BR
    Lien, SY
    Wuu, DS
    THIN SOLID FILMS, 2005, 493 (1-2) : 185 - 191
  • [49] Crystallization of amorphous silicon-germanium films deposited by low pressure chemical vapor deposition
    Guillet, D
    Sarret, M
    Haji, L
    Rogel, R
    Bonnaud, O
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 689 - 693
  • [50] ECONOMICAL ANALYSIS AND OPTIMIZATION OF A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION (LPCVD) REACTOR
    TAMANI, T
    DUVERNEUIL, P
    COUDERC, JP
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 323 - 330