Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

被引：0
|
作者：
机构：
[1] [1,Voogt, F.C.
[2] Ishihara, R.
[3] Tichelaar, F.D.
来源：
Voogt, F.C. (frans.voogt@philips.com) | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] A SIMPLE VELOCITY MODEL FOR LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    AKTIK, C
    BELKOUCH, S
    APPLIED PHYSICS LETTERS, 1995, 67 (06) : 869 - 871
  • [32] PREPARATION OF MAGNESIUM NITRIDE POWDER BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
    MURATA, T
    ITATANI, K
    HOWELL, FS
    KISHIOKA, A
    KINOSHITA, M
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1993, 76 (11) : 2909 - 2911
  • [33] HYDROGEN-BONDING IN AMORPHOUS-SILICON WITH USE OF THE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION TECHNIQUE
    AMATO, G
    DELLAMEA, G
    FIZZOTTI, F
    MANFREDOTTI, C
    MARCHISIO, R
    PACCAGNELLA, A
    PHYSICAL REVIEW B, 1991, 43 (08): : 6627 - 6632
  • [34] EVALUATION OF HIGH-TEMPERATURE SULFIDATION PROTECTION PROVIDED BY AMORPHOUS SI/SIO2 COATINGS PRODUCED BY ARF EXCIMER-LASER CHEMICAL-VAPOR-DEPOSITION
    POU, J
    GONZALEZ, P
    FERNANDEZ, D
    GARCIA, E
    LEON, B
    PEREZAMOR, M
    SPENCER, SJ
    SAUNDERS, SRJ
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1994, 13 (08) : 551 - 553
  • [35] EFFECT OF WATER-VAPOR ON THE GROWTH OF ALUMINUM-OXIDE FILMS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
    KIM, JS
    MARZOUK, HA
    REUCROFT, PJ
    ROBERTSON, JD
    HAMRIN, CE
    THIN SOLID FILMS, 1993, 230 (02) : 156 - 159
  • [36] CHEMICAL-VAPOR-DEPOSITION OF BORON-NITRIDE FILMS STIMULATED BY ULTRAVIOLET-RADIATION PULSES FROM A KRF EXCIMER-LASER
    UGAROV, MV
    AGEEV, VP
    KONOV, VI
    KVANTOVAYA ELEKTRONIKA, 1995, 22 (07): : 706 - 710
  • [37] LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM HEXAMETHYLDISILANE
    CHIU, HT
    HSU, JS
    THIN SOLID FILMS, 1994, 252 (01) : 13 - 18
  • [38] ORIENTATION OF THE BSCCO FILMS PREPARED BY LOW-PRESSURE SINGLE AEROSOL SOURCE METALLORGANIC CHEMICAL-VAPOR-DEPOSITION
    FUFLYIGIN, VN
    KAUL, AR
    POZIGUN, SA
    KLIPPE, L
    WAHL, G
    JOURNAL OF MATERIALS SCIENCE, 1995, 30 (17) : 4431 - 4434
  • [39] PREPARATION OF C-AXIS ORIENTED ZNO FILMS BY LOW-PRESSURE ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
    KOBAYASHI, K
    MATSUBARA, T
    MATSUSHIMA, S
    SHIRAKATA, S
    ISOMURA, S
    OKADA, G
    THIN SOLID FILMS, 1995, 266 (02) : 106 - 109
  • [40] CONTROL OF THE UNIFORMITY OF THICKNESS OF NI THIN-FILMS DEPOSITED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
    FAUCANILLAC, F
    MAURY, F
    SURFACE & COATINGS TECHNOLOGY, 1994, 64 (01): : 21 - 27
12345