BIPOLAR TRANSISTOR WITH SELF-ALIGNED LATERAL PROFILE.

被引：0

作者：

Li, G.P. ^{[1
]}

Chen, Tze-Chiang ^{[1
]}

Chuang, Ching-Te ^{[1
]}

Stork, Johannes M.C. ^{[1
]}

Tang, Denny D. ^{[1
]}

Ketchen, Mark B. ^{[1
]}

Wang, Li-Kong ^{[1
]}

机构：

[1] IBM , Yorktown Heights, NY, USA, IBM , Yorktown Heights, NY, USA

来源：

Electron device letters | 1987年 / EDL-8卷 / 08期

关键词：

SEMICONDUCTOR DEVICES; MOS;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

A self-alignment concept called the self-aligned lateral profile is presented for scaled-down bipolar transistors. Using this concept to form the impurity profile and combining it with a wraparound base contact to reduce the emitter-base contact spacing and with an n** plus -polyrefractory metal emitter stack to reduce the emitter resistance, a high-performance and potentially high-yield device structure can be obtained. The device structure can be adapted to a CMOS or merged bipolar-CMOS process and can also be easily optimized for analog applications.

引用

页码：338 / 340

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