BIPOLAR TRANSISTOR WITH SELF-ALIGNED LATERAL PROFILE.

被引：0

作者：

Li, G.P. ^{[1
]}

Chen, Tze-Chiang ^{[1
]}

Chuang, Ching-Te ^{[1
]}

Stork, Johannes M.C. ^{[1
]}

Tang, Denny D. ^{[1
]}

Ketchen, Mark B. ^{[1
]}

Wang, Li-Kong ^{[1
]}

机构：

[1] IBM , Yorktown Heights, NY, USA, IBM , Yorktown Heights, NY, USA

来源：

Electron device letters | 1987年 / EDL-8卷 / 08期

关键词：

SEMICONDUCTOR DEVICES; MOS;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

A self-alignment concept called the self-aligned lateral profile is presented for scaled-down bipolar transistors. Using this concept to form the impurity profile and combining it with a wraparound base contact to reduce the emitter-base contact spacing and with an n** plus -polyrefractory metal emitter stack to reduce the emitter resistance, a high-performance and potentially high-yield device structure can be obtained. The device structure can be adapted to a CMOS or merged bipolar-CMOS process and can also be easily optimized for analog applications.

引用

页码：338 / 340

共 50 条

[31] SIGE DRIFT BASE BIPOLAR-TRANSISTOR WITH SELF-ALIGNED SELECTIVE CVD-TUNGSTEN ELECTRODES
UGAJIN, M
KUNII, Y
KUWAGAKI, M
KONAKA, S
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) : 427 - 432
[32] SELF-ALIGNED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH A BURIED SUBCOLLECTOR GROWN BY SELECTIVE EPITAXY
SONG, JI
FREI, MR
HAYES, JR
BHAT, R
COX, HM
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (04) : 123 - 125
[33] High-speed Si bipolar transistor with SAVEN (self-aligned device using vertical nitride)
Koo, Yong Seo
Kang, Sang Won
An, Chul
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (08): : 2400 - 2406
[34] SUBMICROMETER SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR PROCESS SUITABLE FOR DIGITAL APPLICATIONS
LEE, WS
ENOKI, T
YAMAHATA, S
MATSUOKA, Y
ISHIBASHI, T
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (12) : 2694 - 2700
[35] AN ADVANCED BIPOLAR-TRANSISTOR WITH SELF-ALIGNED ION-IMPLANTED BASE AND W/POLY EMITTER
CHEN, TC
CHUANG, CT
LI, GP
BASVAIAH, S
TANG, DDL
KETCHEN, MB
NING, TH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) : 1322 - 1327
[36] RIE OF A T-SHAPE REFRACTORY OHMIC CONTACT FOR SELF-ALIGNED HETEROJUNCTION BIPOLAR-TRANSISTOR
COLLUMEAU, JM
ETRILLARD, J
BRESSE, JF
DUBONCHEVALLIER, C
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) : 671 - 675
[37] SELF-ALIGNED TRANSISTORS WITH POLYSILICON EMITTERS FOR BIPOLAR VLSI
CUTHBERTSON, A
ASHBURN, P
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 162 - 167
[38] Extraction of low-frequency noise model of self-aligned AlGaAs/GaAs heterojunction bipolar transistor
Shin, JH
Chung, Y
Suh, Y
Kim, B
1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 1309 - 1312
[39] SELF-ALIGNED TISI2 FOR BIPOLAR APPLICATIONS
KOH, Y
CHIEN, F
VORA, M
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1715 - 1724
[40] SELF-ALIGNED TRANSISTORS WITH POLYSILICON EMITTERS FOR BIPOLAR VLSI
CUTHBERTSON, A
ASHBURN, P
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 242 - 247

← 1 2 3 4 5 →