Study of the Structural Transformation and Phase Composition of Thin Aluminum Films Containing Silicon.

被引：0
|
作者：
Kazimirov, V.P.
Batalin, G.I.
Buzaneva, E.V.
Kaganov, V.Ya.
Trainis, T.P.
Shkavro, A.G.
机构：
来源：
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy | 1979年 / 15卷 / 02期
关键词：
ALUMINUM SILICON ALLOYS - Heat Treatment - METALLOGRAPHY - Transformations;
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学科分类号：
摘要：
It is shown that in aluminum-silicon films with a content of 0. 3 and 1. 33 at. % Si applied on the (111) face of single-crystal n-type silicon at 300 plus or minus 20 degree C the silicon is located near the film/n-silicon boundary and is in a polycrystalline state. Annealing (Al plus Si)/n-Si structures for 15 min at 510 degree C causes epitaxial growth of silicon on the (111) face of n-Si, which is accompanied by texture formation in the aluminum layer.
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页码：217 / 219
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