Study of the Formation Kinetics and Certain Properties of Metal Silicate Films on Silicon.

被引：0
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作者：
Ugai, Ya.A.
Anikhin, V.Z.
Gadebskaya, T.A.
Mittova, I.Ya.
Kuz'micheva, E.A.
Gordin, V.L.
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来源：
| 1978年 / 14卷 / 12期
关键词：
CHEMICAL REACTIONS - Synthesis - SILICON AND ALLOYS - Oxidation;
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摘要：
A study was made of the dependence of the rate of growth of lead, antimony, and bismuth silicate films on the distance of the oxide impurity surface. It was found that the thickness of the layer of metal silicate glass which forms increases linearly with a decrease in this distance. The refractive indices and etching rates (in hydrofluoric acid) of metal silicate films on silicon are determined. On the basis of a study of IR spectra, the film growth mechanism during thermal oxidation of silicon in the presence of lead, antimony, and bismuth oxides are determined.
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页码：2784 / 2786
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