Real-time observation of ellipsometry oscillation during GaAs layer by layer growth by metalorganic vapor-phase epitaxy

被引:0
|
作者
Lee, Jeong-Sik [1 ,2 ]
Sugou, Shigeo [1 ]
Masumoto, Yasuaki [1 ]
机构
[1] Single Quantum Dot Project, ERATO, Tsukuba Research Consortium, 5-9-9 Tokodai, Tsukuba 300-2635, Japan
[2] Optoelectronics High Frequency D., NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
9
引用
收藏
相关论文
共 50 条
  • [21] Metalorganic Vapor-Phase Epitaxy of ZnTe and CdZnTe on GaAs
    G. G. Devyatykh
    A. N. Moiseev
    A. P. Kotkov
    V. V. Dorofeev
    N. D. Grishnova
    V. S. Krasil'nikov
    A. I. Suchkov
    Inorganic Materials, 2002, 38 : 99 - 105
  • [22] METALORGANIC VAPOR-PHASE EPITAXY OF GAAS ON SI(100)
    FREUNDLICH, A
    GRENET, JC
    NEU, G
    LEYCURAS, A
    GIBART, P
    VERIE, C
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1988, 43 (241): : 195 - 196
  • [23] Metalorganic vapor-phase epitaxy of ZnTe and CdZnTe on GaAs
    Devyatykh, GG
    Moiseev, AN
    Kotkov, AP
    Dorofeev, VV
    Grishnova, ND
    Krasil'nikov, VS
    Suchkov, AI
    INORGANIC MATERIALS, 2002, 38 (02) : 99 - 105
  • [24] PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE ON GAAS
    BOUREE, JE
    HELBING, R
    KUHN, W
    GOROCHOV, O
    APPLIED SURFACE SCIENCE, 1995, 86 (1-4) : 437 - 441
  • [25] CHARACTERISTICS OF LASER METALORGANIC VAPOR-PHASE EPITAXY IN GAAS
    AOYAGI, Y
    KANAZAWA, M
    DOI, A
    IWAI, S
    NAMBA, S
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3131 - 3135
  • [26] LOW CONTACT-RESISTANCE GAAS/ALGAAS REGROWTH INTERFACES AND COMPOSITIONAL GRADING LAYER FORMATION DURING GROWTH BY METALORGANIC VAPOR-PHASE EPITAXY
    HIRUMA, K
    HAGA, T
    USAGAWA, T
    IHARA, A
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 440 - 444
  • [27] Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001)
    Zettler, JT
    Wethkamp, T
    Zorn, M
    Pristovsek, M
    Meyne, C
    Ploska, K
    Richter, W
    APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3783 - 3785
  • [28] METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS BEYOND THE PSEUDOMORPHIC LIMIT
    SRIVASTAVA, AK
    ARORA, BM
    BANERJEE, S
    JOURNAL OF CRYSTAL GROWTH, 1993, 130 (3-4) : 490 - 494
  • [29] STEPWISE MONOLAYER GROWTH OF GAAS BY SWITCHED LASER METALORGANIC VAPOR-PHASE EPITAXY
    DOI, A
    AOYAGI, Y
    NAMBA, S
    APPLIED PHYSICS LETTERS, 1986, 49 (13) : 785 - 787
  • [30] New vanadium dopant precursor for GaAs growth by metalorganic vapor-phase epitaxy
    Rebey, A
    Bchetnia, A
    Benjeddou, C
    El Jani, B
    Gibart, P
    JOURNAL OF CRYSTAL GROWTH, 1998, 194 (3-4) : 292 - 296