NOVEL DEVICE ISOLATION TECHNOLOGY WITH SELECTIVE EPITAXIAL GROWTH.

被引：0

作者：

Endo, Nobuhiro ^{[1
]}

Tanno, Koetsu ^{[1
]}

Ishitani, Akihiko ^{[1
]}

Kurogi, Yukinori ^{[1
]}

Tsuya, Hideki ^{[1
]}

机构：

[1] NEC, Microelectronics Research &, Fundamental Research Lab, Kawasaki,, Jpn, NEC, Microelectronics Research & Fundamental Research Lab, Kawasaki, Jpn

来源：

IEEE Transactions on Electron Devices | 1984年 / ED-31卷 / 09期

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D O I：

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摘要：

引用

页码：1283 / 1288

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