NOVEL DEVICE ISOLATION TECHNOLOGY WITH SELECTIVE EPITAXIAL GROWTH.

被引：0
|
作者：
Endo, Nobuhiro [1 ]
Tanno, Koetsu [1 ]
Ishitani, Akihiko [1 ]
Kurogi, Yukinori [1 ]
Tsuya, Hideki [1 ]
机构：
[1] NEC, Microelectronics Research &, Fundamental Research Lab, Kawasaki,, Jpn, NEC, Microelectronics Research & Fundamental Research Lab, Kawasaki, Jpn
来源：
IEEE Transactions on Electron Devices | 1984年 / ED-31卷 / 09期
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摘要：
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页码：1283 / 1288
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