Behavior of excess arsenic in undoped, semi-insulating GaAs during ingot annealing

被引：0
|
作者：
Suemitsu, Maki [1 ]
Terada, Koji [1 ]
Nishijima, Masaaki [1 ]
Miyamoto, Nobuo [1 ]
机构：
[1] Tohoku Univ, Sendai, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1992年 / 31卷 / 12 A期
关键词：
11;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Photoluminescence of electron-hole plasma in semi-insulating undoped GaAs
    V. F. Kovalenko
    S. V. Shutov
    Semiconductors, 2004, 38 : 1378 - 1380
  • [32] PHOTOINDUCED TRANSIENT SPECTROSCOPY (PITS) STUDY ON UNDOPED SEMI-INSULATING GAAS
    FANG, Z
    SCHLESINGER, TE
    MILNES, AG
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S39 - S40
  • [33] Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals
    Glinchuk, KD
    Litovchenko, NM
    Prokhorovich, AV
    Stril'chuk, ON
    SEMICONDUCTORS, 2000, 34 (11) : 1259 - 1263
  • [34] EFFECTS OF STOICHIOMETRY ON THERMAL STABILITY OF UNDOPED, SEMI-INSULATING GaAs.
    Ta, L.B.
    Hobgood, H.M.
    Rohatgi, A.
    Thomas, R.N.
    1600, (53):
  • [35] STRIATION ETCHING OF UNDOPED, SEMI-INSULATING LEC-GROWN GAAS
    MIYAZAWA, S
    JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 459 - 461
  • [36] Edge-photoluminescence concentration dependence in semi-insulating undoped GaAs
    Kovalenko, VF
    Litvinova, MB
    Shutov, SV
    SEMICONDUCTORS, 2002, 36 (02) : 167 - 170
  • [37] UNDOPED SEMI-INSULATING GAAS OF VERY LOW RESIDUAL ACCEPTOR CONCENTRATION
    REICHLMAIER, S
    LOHNERT, K
    BAUMGARTNER, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (12): : 2329 - 2332
  • [38] EFFECTS OF WHOLE INGOT ANNEALING ON 1.49 EV PL PROPERTIES IN LEC-GROWN SEMI-INSULATING GAAS
    YOKOGAWA, M
    NISHINE, S
    SASAKI, M
    MATSUMOTO, K
    FUJITA, K
    AKAI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05): : L339 - L341
  • [39] OPTICALLY INDUCED EXCESS HOLE POPULATION IN SEMI-INSULATING GAAS
    JIMENEZ, J
    ALVAREZ, A
    BONNAFE, J
    PHYSICAL REVIEW B, 1990, 42 (18): : 11762 - 11767
  • [40] Defects in undoped semi-insulating InP
    Chen Yan
    Guo Xin
    SELECTED PAPERS FROM CONFERENCES OF THE PHOTOELECTRONIC TECHNOLOGY COMMITTEE OF THE CHINESE SOCIETY OF ASTRONAUTICS: OPTICAL IMAGING, REMOTE SENSING, AND LASER-MATTER INTERACTION 2013, 2014, 9142
12345