SPATIAL SCALE OF STATISTICAL FLUCTUATIONS OF THE POTENTIAL IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES.

被引：0

作者：

Guzer, A.A. ^{[1
]}

Gurtov, V.A. ^{[1
]}

机构：

[1] Petrozavodsk State Univ, Petrozavodsk, USSR, Petrozavodsk State Univ, Petrozavodsk, USSR

来源：

Soviet physics. Semiconductors | 1984年 / 18卷 / 08期

关键词：

MATHEMATICAL MODELS - Applications - SEMICONDUCTOR DEVICES; MIS; -; Structures;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A model of an inhomogenous charge distribution at the insulator-semiconductor interface is used to analyze the screening effect of the gate electrode in the depletion and weak inversion cases. The model is also used to calculate the optimal size of the inhomogeneities that dominate the contribution to the amplitude of the deviation of the potential from the average value. It is shown that a model of inhomogeneities in the form of a chessboard pattern describes well a number of parameters of fluctuations of the potential in a metal-insulator-semiconductor structure when these fluctuations are created near the semiconductor surface by randomly distributed discrete charges.

引用

页码：856 / 860

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