SPATIAL SCALE OF STATISTICAL FLUCTUATIONS OF THE POTENTIAL IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES.

被引：0
|
作者：
Guzer, A.A. [1 ]
Gurtov, V.A. [1 ]
机构：
[1] Petrozavodsk State Univ, Petrozavodsk, USSR, Petrozavodsk State Univ, Petrozavodsk, USSR
来源：
Soviet physics. Semiconductors | 1984年 / 18卷 / 08期
关键词：
MATHEMATICAL MODELS - Applications - SEMICONDUCTOR DEVICES; MIS; -; Structures;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A model of an inhomogenous charge distribution at the insulator-semiconductor interface is used to analyze the screening effect of the gate electrode in the depletion and weak inversion cases. The model is also used to calculate the optimal size of the inhomogeneities that dominate the contribution to the amplitude of the deviation of the potential from the average value. It is shown that a model of inhomogeneities in the form of a chessboard pattern describes well a number of parameters of fluctuations of the potential in a metal-insulator-semiconductor structure when these fluctuations are created near the semiconductor surface by randomly distributed discrete charges.
引用
收藏
页码：856 / 860
相关论文
共 50 条
  • [21] CHARACTERISTICS OF SCREENING OF AN INHOMOGENEOUS BUILT-IN CHARGE AND THEIR RELATIONSHIP TO THE PHYSICAL PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES.
    Sachenko, A.V.
    Snitko, O.V.
    Shkrebtil, A.I.
    Soviet physics. Semiconductors, 1981, 15 (01): : 40 - 43
  • [22] Metal-Insulator-Semiconductor Photodetectors
    Lin, Chu-Hsuan
    Liu, Chee Wee
    SENSORS, 2010, 10 (10) : 8797 - 8826
  • [23] ACCUMULATION OF CHARGE IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES BASED ON INSB
    VAINER, BG
    KOLOSANOV, VA
    KURYSHEV, GL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (04): : 432 - 435
  • [24] ILLUMINATION-INDUCED SWITCHING IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    KRAVCHENKO, AB
    PLOTNIKOV, AF
    POPOV, YM
    SELEZNEV, VN
    SHUBIN, VE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (04): : 522 - 523
  • [25] Deep-level spectroscopy in metal-insulator-semiconductor structures
    Kurtz, A.
    Munoz, E.
    Chauveau, J. M.
    Hierro, A.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (06)
  • [26] Analyzing conductance-frequency curves of metal-insulator-semiconductor structures subject to surface-potential fluctuations and electrically active states inside the insulator
    Avdeev N.A.
    Klimov I.V.
    Yakovlev R.A.
    Russian Microelectronics, 2007, 36 (06) : 402 - 408
  • [27] Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
    Kalbitz, R.
    Fruebing, P.
    Gerhard, R.
    Taylor, D. M.
    APPLIED PHYSICS LETTERS, 2011, 98 (03)
  • [28] A MODEL FOR THE QUANTIZED ACCUMULATION LAYER IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    LOPEZVILLANUEVA, JA
    MELCHOR, I
    GAMIZ, F
    BANQUERI, J
    JIMENEZTEJADA, JA
    SOLID-STATE ELECTRONICS, 1995, 38 (01) : 203 - 210
  • [29] SCREENING OF FLUCTUATIONS OF THE SURFACE-POTENTIAL IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES
    GUZEV, AA
    GURTOV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (11): : 1292 - 1295
  • [30] EXAMINATION OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES BY SCANNING ELECTRON MICROSCOPY
    SULWAY, DV
    THORNTON, PR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : C77 - &
12345