CURRENT TRANSPORT MECHANISM OF HYDROGENATED AMORPHOUS SILICON SCHOTTKY BARRIER DIODES.

被引：0

作者：

Mishima, Yasuyoshi ^{[1
]}

Hirose, Masataka ^{[1
]}

Osaka, Yukio ^{[1
]}

机构：

[1] Department of Electrical Engineering, Hiroshima University, Japan

来源：

| 1600年 / 20期

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[21] ELECTRON-TRANSPORT MECHANISMS IN METAL SCHOTTKY-BARRIER CONTACTS TO HYDROGENATED AMORPHOUS-SILICON
HELLER, DE
DAWSON, RM
MALONE, CT
NAG, S
WRONSKI, CR
JOURNAL OF APPLIED PHYSICS, 1992, 72 (06) : 2377 - 2384
[22] MIXERS EMPLOYING SCHOTTKY-BARRIER PLANAR DIODES.
Mezentsev, V.P.
Navel'yev, D.G.
Soviet Journal of Communications Technology & Electronics (English translation of Radiotekhnika i Elektronika), 1985, 30 (07): : 143 - 144
[23] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON
JOUSSE, D
BASSET, R
DELIONIBUS, S
BOURDON, B
APPLIED PHYSICS LETTERS, 1980, 37 (02) : 208 - 211
[24] MAGNETIC QUANTUM EFFECTS IN AMORPHOUS-HYDROGENATED-SILICON DOUBLE SCHOTTKY DIODES
JAFAR, M
HANEMAN, D
PHYSICAL REVIEW B, 1994, 50 (08): : 5707 - 5709
[25] DISTORTION OF LOW-TEMPERATURE VOLTAGE-CURRENT CHARACTERISTICS IN SCHOTTKY BARRIER DIODES.
Bozhkov, V.G.
1600, (30):
[26] Time dependence of the reverse current in amorphous silicon Schottky diodes
Aflatooni, K
Hornsey, R
Nathan, A
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 925 - 930
[27] MECHANISM OF DISPERSIVE TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
SHIRAFUJI, J
MATSUI, H
INUISHI, Y
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3983 - 3986
[28] SWITCHING CHARACTERISTICS OF AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
NARA, Y
KUDOU, Y
MATSUMURA, M
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1175 - 1178
[29] SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES
WRONSKI, CR
CARLSON, DE
DANIEL, RE
APPLIED PHYSICS LETTERS, 1976, 29 (09) : 602 - 605
[30] CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
BEICHLER, J
FUHS, W
MELL, H
WELSCH, HM
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 587 - 592

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