DISTORTION OF LOW-TEMPERATURE VOLTAGE-CURRENT CHARACTERISTICS IN SCHOTTKY BARRIER DIODES.

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Bozhkov, V.G.

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| 1600年 / 30期

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CHARGE CAPTURE - LOW-TEMPERATURE VOLTAGE-CURRENT CHARACTERISTICS - SCHOTTKY BARRIER DIODES;

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[1] ON THE DISTORTION OF LOW-TEMPERATURE CURRENT-VOLTAGE CHARACTERISTICS OF DIODES WITH SCHOTTKY-BARRIER
BOZHKOV, VG
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1987, 30 (02): : 29 - 32
[2] EFFECT OF CHARGE CARRIER CONCENTRATION IN A SEMICONDUCTOR ON VOLTAGE-CURRENT CHARACTERISTICS OF DIODES WITH SCHOTTKY-BARRIER AT LOW-TEMPERATURE
BOZHKOV, VG
MALAKHOVSKII, OY
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1986, 29 (10): : 87 - 93
[3] EFFECT OF DIELECTRIC SURFACING ON LOW-TEMPERATURE CURRENT-VOLTAGE CHARACTERISTICS OF DIODES WITH SCHOTTKY-BARRIER
BOZHKOV, VG
MALAKHOVSKII, OY
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (11): : 101 - 105
[4] EFFECT OF CARRIER CONCENTRATION IN THE SEMICONDUCTOR ON THE VOLTAGE-CURRENT CHARACTERISTICS OF SCHOTTKY BARRIER DIODES AT LOW TEMPERATURES.
Bozhkov, V.G.
Malakhovskii, O.Yu.
1600, (29):
[5] LOW-TEMPERATURE BEHAVIOR OF DIRECT CURRENT-VOLTAGE CHARACTERISTICS OF DIODES WITH SCHOTTKY BARRIERS
BOZHKOV, VG
MALAKHOVSKII, OY
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (01): : 94 - 100
[6] SCHOTTKY BARRIER DIODES.
Hopper, Charles
New Electronics, 1983, 16 (21):
[7] ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS HYDROGENATED SILICON SCHOTTKY DIODES.
Chen, Inan
Lee, Sanboh
Journal of Applied Physics, 1982, 53 (02): : 1045 - 1051
[8] Temperature characteristics of Schottky barrier diodes for low-voltage sensing applications
Li, Yiran
Lu, Li
Block, S. T.
Li, Changzhi
ELECTRONICS LETTERS, 2012, 48 (07) : 406 - U149
[9] Effect of series resistance on the current-voltage characteristics of inhomogeneous Schottky diodes.
Chand, S
ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004, : 251 - 254
[10] Temperature Dependence Of Current-Voltage Characteristics Of Pt/InN Schottky Barrier Diodes
Rangel-Kuoppa, Victor-Tapio
Suihkonen, Sami
Sopanen, Markku
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PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 53 - 54

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