DISTORTION OF LOW-TEMPERATURE VOLTAGE-CURRENT CHARACTERISTICS IN SCHOTTKY BARRIER DIODES.

被引：0

作者：

Bozhkov, V.G.

机构：

来源：

| 1600年 / 30期

关键词：

CHARGE CAPTURE - LOW-TEMPERATURE VOLTAGE-CURRENT CHARACTERISTICS - SCHOTTKY BARRIER DIODES;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[21] METAL-POLYACETYLENE SCHOTTKY BARRIER DIODES.
Kanicki, Jerzy
Molecular crystals and liquid crystals, 1983, 105 (1-4): : 203 - 217
[22] VOLTAGE-CURRENT CHARACTERISTICS OF CESIUM DIODES AT HIGH CURRENT DENSITIES
MATSKEVICH, TL
KRACHINO, TV
SOVIET PHYSICS TECHNICAL PHYSICS-USSR, 1971, 16 (06): : 934 - +
[23] Investigation of the Parameters of Schottky-Barrier Diodes.
Wosinski, Tadeusz
Jelenski, Andrzej
Elektronika, 1975, 16 (05): : 195 - 198
[24] EXPERIMENTS WITH GaAs SCHOTTKY BARRIER IMPATT DIODES.
Nio, Koichi
Kadoo, Sadayuki
NHK Laboratories Note, 1972, (156):
[25] LOW DISTORTION FEEDBACK VOLTAGE-CURRENT CONVERSION TECHNIQUE
WILSON, B
ELECTRONICS LETTERS, 1981, 17 (04) : 157 - 159
[26] A method to calculate the voltage-current characteristics of 4H SiC Schottky barrier diode
Talwar, Rajneesh
Chatterjee, Ashoke K.
MAEJO INTERNATIONAL JOURNAL OF SCIENCE AND TECHNOLOGY, 2009, 3 (02) : 287 - 294
[27] Correlation between current-voltage and capacitance-voltage characteristics of schottky barrier diodes
Zhu, Y
Ishimaru, Y
Takahashi, N
Shimizu, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) : 2032 - 2036
[28] Correlation between current-voltage and capacitance-voltage characteristics of Schottky barrier diodes
Sharp Corp, Nara, Japan
IEEE Trans Electron Devices, 9 (2032-2036):
[29] Temperature dependence of current-voltage characteristics of Al/p-Si (100) Schottky barrier diodes
Yuksel, O. Faruk
PHYSICA B-CONDENSED MATTER, 2009, 404 (14-15) : 1993 - 1997
[30] MIXERS EMPLOYING SCHOTTKY-BARRIER PLANAR DIODES.
Mezentsev, V.P.
Navel'yev, D.G.
Soviet Journal of Communications Technology & Electronics (English translation of Radiotekhnika i Elektronika), 1985, 30 (07): : 143 - 144

← 1 2 3 4 5 →