High performance MMICs with submillimeter wave InP-based HEMTs

被引:0
|
作者
Pobanz, C. [1 ]
Matloubian, M. [1 ]
Radisic, V. [1 ]
Raghavan, G. [1 ]
Case, M. [1 ]
Micovic, M. [1 ]
Hu, M. [1 ]
Nguyen, C. [1 ]
Weinreb, S. [1 ]
Samoska, L. [1 ]
机构
[1] HRL Lab, Malibu, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
11
引用
收藏
页码:67 / 70
相关论文
共 50 条
  • [41] Gate and recess engineering for ultrahigh-speed InP-based HEMTs
    Suemitsu, T
    Ishii, T
    Ishii, Y
    IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (10): : 1283 - 1288
  • [42] High-Gain Submillimeter-Wave mHEMT Amplifier MMICs
    Tessmann, A.
    Leuther, A.
    Massler, H.
    Hurm, V.
    Kuri, M.
    Zink, M.
    Riessle, M.
    Loesch, R.
    2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010, : 53 - 56
  • [43] Electron irradiation effects on InP-based HEMTs with different gate widths
    Sun, S. X.
    Fu, X. L.
    Wang, L.
    Yi, J. J.
    Yao, R. X.
    Zheng, X. Y.
    Wu, H. T.
    Liv, F.
    Zhong, Y. H.
    Li, Y. X.
    Ding, P.
    Jin, Z.
    JOURNAL OF OVONIC RESEARCH, 2021, 17 (05): : 411 - 420
  • [44] Improvement in device performances of InP-based HEMTs by thinning a barrier layer
    Hara, Naoki
    Takahashi, Tsuyoshi
    Makiyama, Kozo
    Ohki, Tosihiro
    IEEJ Transactions on Electronics, Information and Systems, 2008, 128 (06) : 861 - 864
  • [45] On-state breakdown measurements in GaAs MESFETs and InP-based HEMTs
    Zanoni, E
    Meneghesso, G
    Bortoletto, A
    Maretto, M
    Massari, G
    Buttari, D
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 317 - 320
  • [46] Reliability study of parasitic source and drain resistances of InP-based HEMTs
    Suemitsu, T
    Fukai, YK
    Sugiyama, H
    Watanabe, K
    Yokoyama, H
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 190 - 193
  • [47] Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs
    Cao, Shurui
    Feng, Ruize
    Wang, Bo
    Liu, Tong
    Ding, Peng
    Jin, Zhi
    CHINESE PHYSICS B, 2022, 31 (05)
  • [48] Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs
    曹书睿
    封瑞泽
    王博
    刘桐
    丁芃
    金智
    Chinese Physics B, 2022, 31 (05) : 827 - 831
  • [49] High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs
    Tran, L
    Isobe, R
    Delaney, M
    Rhodes, R
    Jang, D
    Brown, J
    Nguyen, L
    Le, M
    Thompson, M
    Liu, TY
    1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 9 - 12
  • [50] High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs
    Tran, L
    Isobe, R
    Delaney, M
    Rhodes, R
    Jang, D
    Brown, J
    Nguyen, L
    Le, M
    Thompson, M
    Liu, TY
    MONOLITHIC CIRCUITS SYMPOSIUM, DIGEST OF PAPERS, 1996, : 133 - 136