共 50 条
- [32] Novel asymmetric gate-recess engineering for sub-millimeter-wave InP-based HEMTs 2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 2159 - 2162
- [33] Evidence of existence of different surface states in inp-based high electron mobility transistors (HEMTs) 2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 118 - 120
- [34] Regrowth in high-performance InP-based DHBT devices STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XL (SOTAPOCS XL) AND NARROW BANDGAP OPTOELECTRONIC MATERIALS AND DEVICES II, 2004, 2004 (02): : 77 - 86
- [36] Bias acceleration model of drain resistance degradation in InP-based HEMTs 41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, : 324 - 328
- [37] Ultrahigh-speed integrated circuits using InP-based HEMTs JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B): : 1359 - 1364
- [39] Millimeterwave and digital applications of InP-based MBE grown HEMTs and HBTs Journal of Crystal Growth, 1997, 175-176 (pt 1): : 8 - 12