'GENERATION' LIFETIME OF CARRIERS IN METAL-INSULATOR-GERMANIUM STRUCTURES.

被引：0

作者：

Nastaushev, Yu.V. ^{[1
]}

Ovsyuk, V.N. ^{[1
]}

机构：

[1] Acad of Sciences of the USSR, Inst, of Semiconductor Physics,, Novosibirsk, USSR, Acad of Sciences of the USSR, Inst of Semiconductor Physics, Novosibirsk, USSR

来源：

Soviet physics. Semiconductors | 1984年 / 18卷 / 08期

关键词：

'GENERATION' LIFETIME - CARRIER LIFETIME - EFFICIENCY OF SEMICONDUCTOR DEVICES;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：939 / 940

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