'GENERATION' LIFETIME OF CARRIERS IN METAL-INSULATOR-GERMANIUM STRUCTURES.

被引：0
|
作者：
Nastaushev, Yu.V. [1 ]
Ovsyuk, V.N. [1 ]
机构：
[1] Acad of Sciences of the USSR, Inst, of Semiconductor Physics,, Novosibirsk, USSR, Acad of Sciences of the USSR, Inst of Semiconductor Physics, Novosibirsk, USSR
来源：
Soviet physics. Semiconductors | 1984年 / 18卷 / 08期
关键词：
'GENERATION' LIFETIME - CARRIER LIFETIME - EFFICIENCY OF SEMICONDUCTOR DEVICES;
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页码：939 / 940
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