Surface Preparation of III-V Compounds by Reactive Ion Etching in a Methane-Based Gas Mixture.

被引：0

作者：

Henry, L. ^{[1
]}

Vaudry, C. ^{[1
]}

Alnot, P. ^{[1
]}

Olivier, J. ^{[1
]}

机构：

[1] CNET, Lannion, Fr, CNET, Lannion, Fr

来源：

Le Vide, les couches minces | 1988年 / 43卷 / 241期

关键词：

GASES; -; IONS; METHANE; ORGANOMETALLICS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Dry etching techniques are becoming increasingly important, and recently a Metal Organic Reactive Ion Etching (MORIE) process usable in micro-opto-electronic technology has been reported. This process appears usable also for surface treatments; for example, before epitaxial growth.

引用

页码：169 / 170

共 47 条

[41] Volatile products and endpoint detection in reactive ion etching of III-V compounds with a broad beam ECR source (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 179-182, 1995)
Melville, DL
Budinavicius, J
Thompson, DA
Simmons, JG
ION BEAM MODIFICATION OF MATERIALS, 1996, : 179 - 182
[42] Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H-2/O-2 gas mixture
Etrillard, J
Heliot, F
Ossart, P
Juhel, M
Patriarche, G
Carcenac, P
Vieu, C
Puech, M
Maquin, P
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03): : 1056 - 1061
[43] Electron cyclotron resonance-reactive ion etching of III-V semiconductors by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow
Haneji, N
Segami, G
Ide, T
Suzuki, T
Arakawa, T
Tada, K
Shimogaki, Y
Nakano, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (6B): : 3958 - 3961
[44] Electrical evaluation of InP surface damage caused by reactive ion etching with a mixture of methane (CH4) or ethane (C2H6) and hydrogen (H2)
J Vac Sci Technol B, 1 (103):
[45] Electrical evaluation of InP surface damage caused by reactive ion etching with a mixture of methane (CH4) or ethane (C2H6) and hydrogen (H-2)
Yamamoto, N
Kishi, K
Matsumoto, S
Kadota, Y
Iga, R
Okamoto, H
Mawatari, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (01): : 103 - 108
[46] HYBRID ELECTRON-CYCLOTRON RESONANCE RADIOFREQUENCY PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CL2-BASED DISCHARGES .2. INP AND RELATED-COMPOUNDS
PEARTON, SJ
HOBSON, WS
CHAKRABARTI, UK
KATZ, A
PERLEY, AP
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1991, 11 (04) : 423 - 438
[47] Hybrid Triple-Junction Solar Cells by Surface Activate Bonding of III-V Double-Junction-Cell Heterostructures to Ion-Implantation-Based Si Cells
Shigekawa, Naoteru
Chai, Li
Morimoto, Masashi
Liang, Jianbo
Onitsuka, Ryusuke
Agui, Takaaki
Juso, Hiroyuki
Takamoto, Tatsuya
2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 534 - 537

← 1 2 3 4 5 →