REDISTRIBUTION OF IMPLANTED PHOSPHORUS AFTER PLATINUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY BARRIER DIODES.

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作者：
Kikuchi, Akira [1 ]
Sugaki, Shojiro [1 ]
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[1] Central Research Laboratory, Hitachi, Limited, Kokubunji, Tokyo 185, Japan
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| 1600年 / 53期
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