CURRENT TRANSPORT MECHANISM OF HYDROGENATED AMORPHOUS SILICON SCHOTTKY BARRIER DIODES.

被引：0

作者：

Mishima, Yasuyoshi ^{[1
]}

Hirose, Masataka ^{[1
]}

Osaka, Yukio ^{[1
]}

机构：

[1] Department of Electrical Engineering, Hiroshima University, Japan

来源：

| 1600年 / 20期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] CURRENT TRANSPORT MECHANISM OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
MISHIMA, Y
HIROSE, M
OSAKA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : 593 - 596
[2] ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS HYDROGENATED SILICON SCHOTTKY DIODES.
Chen, Inan
Lee, Sanboh
Journal of Applied Physics, 1982, 53 (02): : 1045 - 1051
[3] FLICKER NOISE IN HYDROGENATED AMORPHOUS-SILICON SCHOTTKY DIODES.
Bathaei, F.Z.
Anderson, J.C.
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1988, 57 (02): : 259 - 269
[4] PHOTOADMITTANCE IN AMORPHOUS-SILICON SCHOTTKY DIODES.
Drazin, J.P.V.
Anderson, J.C.
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1986, 54 (01): : 19 - 36
[5] SCHOTTKY BARRIER DIODES.
Hopper, Charles
New Electronics, 1983, 16 (21):
[6] ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS HYDROGENATED SILICON SCHOTTKY DIODES
CHEN, I
LEE, S
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1045 - 1051
[7] THE CAPACITANCE OF RF SPUTTERED HYDROGENATED AMORPHOUS-SILICON, SCHOTTKY-BARRIER DIODES
FERNANDEZCANQUE, HL
ALLISON, J
THOMPSON, MJ
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7025 - 7033
[8] EFFECT OF CURRENT FLOW ON THE RELIABILITY OF SCHOTTKY-BARRIER DIODES.
Zykov, G.A.
Levandovskiy, V.G.
Panichevskaya, V.I.
Panfilova, S.V.
Chayka, G.Ye.
1600, (31):
[9] HYDROGENATED AMORPHOUS-GERMANIUM SCHOTTKY-BARRIER DIODES
FAJARDO, F
CHAMBOULEYRON, I
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 : A347 - A348
[10] Electron-transport mechanisms in metal schottky barrier contacts to hydrogenated amorphous silicon
1600, Publ by American Inst of Physics, Woodbury, NY, USA (72):

← 1 2 3 4 5 →