共 50 条
- [31] CHARACTERISTICS OF UNDOPED SEMI-INSULATING GaAs CRYSTAL GROWN BY LEC TECHNIQUE. 1987, 1 (01): : 35 - 40
- [32] ELLIPSOMETRY AND REFLECTANCE OF ETCHED (100) SURFACES OF UNDOPED, SEMI-INSULATING LEC GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05): : L250 - L253
- [33] INSITU PURIFICATION GROWTH OF UNDOPED SEMI-INSULATING GAAS SINGLE-CRYSTALS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 23 - 29
- [34] METASTABLE STATE OF THE 0.68-EV EMISSION IN UNDOPED SEMI-INSULATING GAAS PHYSICAL REVIEW B, 1985, 31 (12): : 8259 - 8262
- [35] Orientation dependence of surface passivation for semi-insulating GaAs COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS, 1996, 421 : 93 - 98
- [36] Sharp, long wavelength cathodoluminescence emission from undoped semi-insulating GaAs JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A): : 7611 - 7616
- [37] UNIFORMITY OF ANNEALED AND BULK-QUENCHED UNDOPED, SEMI-INSULATING, LEC GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 31 - 36
- [38] PHOTOLUMINESCENCE EXCITATION OF THE 0.77-EV EMISSION IN UNDOPED SEMI-INSULATING GAAS PHYSICAL REVIEW B, 1984, 29 (04): : 2283 - 2285
- [39] Behavior of excess arsenic in undoped, semi-insulating GaAs during ingot annealing Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (12 A):