共 50 条
- [1] STRIATIONS IN UNDOPED SEMI-INSULATING LEC GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (01): : L65 - L68
- [4] SEM-EBIC INVESTIGATIONS OF SEMI-INSULATING UNDOPED LEC-GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (05): : L364 - L366
- [5] CHARACTERISTICS OF UNDOPED SEMI-INSULATING GaAs CRYSTAL GROWN BY LEC TECHNIQUE. 1987, 1 (01): : 35 - 40
- [6] ELLIPSOMETRY AND REFLECTANCE OF ETCHED (100) SURFACES OF UNDOPED, SEMI-INSULATING LEC GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05): : L250 - L253
- [7] IMPROVED UNIFORMITY OF RESISTIVITY DISTRIBUTION IN LEC SEMI-INSULATING GAAS PRODUCED BY ANNEALING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L602 - L605
- [8] REPRODUCIBILITY AND UNIFORMITY CONSIDERATIONS IN LEC GROWTH OF UNDOPED, SEMI-INSULATING GAAS FOR LARGE-AREA, DIRECT IMPLANTATION TECHNOLOGY INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 31 - 39
- [10] Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 521 - 524