REPRODUCIBILITY AND UNIFORMITY CONSIDERATIONS IN LEC GROWTH OF UNDOPED, SEMI-INSULATING GAAS FOR LARGE-AREA, DIRECT IMPLANTATION TECHNOLOGY

被引：0
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作者：
TA, LB
THOMAS, RN
ELDRIDGE, GW
HOBGOOD, HM
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来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1983年 / 65期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：31 / 39
页数：9
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