CHARACTERISTICS OF A-Si FILMS PREPARED BY COMPRESSED MAGNETIC FIELD (CMF)-MAGNETRON SPUTTERING.

被引：0
|
作者：
Hata, Tomonobu [1 ]
Kamide, Yukihiro [1 ]
Nakagawa, Shigeki [1 ]
Hattori, Kouji [1 ]
机构：
[1] Kanazawa Univ, Kanazawa, Jpn, Kanazawa Univ, Kanazawa, Jpn
来源：
Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) | 1988年 / 71卷 / 02期
关键词：
ELECTRON TUBES; MAGNETRON - SEMICONDUCTING FILMS - SPUTTERING;
D O I：
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中图分类号：
学科分类号：
摘要：
The compressed magnetic field magnetron sputtering system has been developed to minimize the damage to the substrate and to enable film deposition at low temperature. High-quality a-Si:H film has been formed by using He whose atomic radius is smaller than that of Ar. In this paper, the characteristics of the compressed magnetic field-magnetron sputtering system are described. The a-Si:H film is characterized by using the partial pressure of hydrogen as a parameter. Moreover, the characteristics and thermoproperty of the film by He sputtering are compared with those of the film by Ar sputtering.
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页码：9 / 18
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