Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine

被引:0
|
作者
Sekiguchi, Shigeaki [1 ]
Miyamoto, Tomoyuki [1 ]
Koyama, Fumio [1 ]
Iga, Kenichi [1 ]
机构
[1] Tokyo Inst of Technology, Yokohama, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:2638 / 2639
相关论文
共 50 条
  • [41] AlGaAs/GaAs quantum well lasers grown by metalorganic chemical deposition using tertiarybutylarsine in nitrogen ambient
    Bo, BX
    Tang, XH
    Zhang, BL
    Huang, GS
    Zhang, YC
    Chuan, TS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (6A): : 3410 - 3412
  • [42] Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films
    H. C. Chui
    R. M. Biefeld
    B. E. Hammons
    W. G. Breiland
    T. M. Brennan
    E. D. Jones
    H. K. Moffat
    M. H. Kim
    P. Grodzinski
    K. H. Chang
    H. C. Lee
    Journal of Electronic Materials, 1997, 26 : 37 - 42
  • [43] METALORGANIC MOLECULAR-BEAM EPITAXY OF HEAVILY CARBON-DOPED INP USING TERTIARYBUTYLPHOSPHINE AS A CARBON AUTO-DOPING SOURCE
    OH, JH
    SHIRAKASHI, JI
    FUKUCHI, F
    KONAGAI, M
    APPLIED PHYSICS LETTERS, 1995, 66 (21) : 2891 - 2893
  • [44] Zinc doping profile in AlGaAs/GaAs heteroepitaxial structures grown by metalorganic chemical vapor deposition
    Akchurin, RK
    Andreev, AY
    Bulaev, PV
    Zalevskii, ID
    Marmalyuk, AA
    Nikitin, DB
    Padalitsa, AA
    INORGANIC MATERIALS, 2004, 40 (08) : 787 - 790
  • [45] MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    WU, CC
    CHANG, CY
    CHEN, PA
    CHEN, HD
    LIN, KC
    CHAN, SH
    APPLIED PHYSICS LETTERS, 1994, 65 (10) : 1269 - 1271
  • [46] Silicon delta doping of GaInP grown by low-pressure metalorganic chemical vapor deposition
    Wang, Chien-Jen
    Wu, Janne-Wha
    Chan, Shih-Hsiung
    Chang, Chun-Yen
    Min Sze, Simon
    Feng, Ming-Shiann
    Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (9 A):
  • [47] Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition
    R. Kh. Akchurin
    A. Yu. Andreev
    P. V. Bulaev
    I. D. Zalevskii
    A. A. Marmalyuk
    D. B. Nikitin
    A. A. Padalitsa
    Inorganic Materials, 2004, 40 : 787 - 790
  • [48] ZN AND SI DOPING IN (110) GAAS EPILAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OKAMOTO, K
    FURUTA, M
    YAMAGUCHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2121 - L2124
  • [49] Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition
    Cho, HK
    Lee, JY
    Jeon, SR
    Yang, GM
    APPLIED PHYSICS LETTERS, 2001, 79 (23) : 3788 - 3790
  • [50] Mechanism of carbon incorporation from carbon tetrabromide in GaAs grown by metalorganic chemical vapor deposition
    Watanabe, N
    Ito, H
    JOURNAL OF CRYSTAL GROWTH, 1997, 178 (03) : 213 - 219