Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine

被引：0
|
作者：
Sekiguchi, Shigeaki [1 ]
Miyamoto, Tomoyuki [1 ]
Koyama, Fumio [1 ]
Iga, Kenichi [1 ]
机构：
[1] Tokyo Inst of Technology, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 5 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2638 / 2639
相关论文
共 50 条
  • [31] HEAVILY SI-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND SILANE
    CHICHIBU, S
    IWAI, A
    MATSUMOTO, S
    HIGUCHI, H
    APPLIED PHYSICS LETTERS, 1992, 60 (04) : 489 - 491
  • [32] Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine
    Pan, Z
    Miyamoto, T
    Schlenker, D
    Sato, S
    Koyama, F
    Iga, K
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) : 6409 - 6411
  • [33] GROWTH OF HIGHLY STRAINED INAS/INP HETEROSTRUCTURES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE
    TRAN, CA
    MASUT, RA
    COVA, P
    BREBNER, JL
    APPLIED PHYSICS LETTERS, 1992, 60 (05) : 589 - 591
  • [34] Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine
    Prec. and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsura, Midori-ku, Yokohama 226-8503, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 2 B (1012-1014):
  • [35] Magnesium doping of GaN by metalorganic chemical vapor deposition
    Lu, HQ
    Bhat, I
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 497 - 502
  • [36] Tertiarybutylarsine for metalorganic chemical vapor deposition growth of high purity, high uniformity films
    Chui, HC
    Biefeld, RM
    Hammons, BE
    Breiland, WG
    Brennan, TM
    Jones, ED
    Moffat, HK
    Kim, MH
    Grodzinski, P
    Chang, KH
    Lee, HC
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (01) : 37 - 42
  • [37] RAMAN-SCATTERING STUDIES OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS ALAS SUPERLATTICES
    HARK, SK
    WEINSTEIN, BA
    BURNHAM, RD
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 1112 - 1114
  • [38] AlGaAs/GaAs quantum well lasers grown by metalorganic chemical deposition using tertiarybutylarsine in nitrogen ambient
    Bo, B. (ebxbo@ntu.edu.sg), 1600, Japan Society of Applied Physics (43):
  • [39] Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine
    Pan, Z
    Miyamoto, T
    Schlenker, D
    Koyama, F
    Iga, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1012 - 1014
  • [40] UNIFORMITY IN THE ELECTRICAL CHARACTERISTICS OF GAAS/ALAS TUNNEL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    BONNEFOI, AR
    MCGILL, TC
    BURNHAM, RD
    APPLIED PHYSICS LETTERS, 1985, 47 (03) : 307 - 309
12345