Effect of axial pressure on the capacitance of metal-tunneling-transparent oxide-semiconductor structures

被引：0
|
作者：
机构：
来源：
| 1600年 / 31期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] First-principles theory of tunneling currents in metal-oxide-semiconductor structures
    Zhang, X. -G.
    Lu, Zhong-Yi
    Pantelides, Sokrates T.
    APPLIED PHYSICS LETTERS, 2006, 89 (03)
  • [32] Metal Nanoparticles Assisted Ultrafast Laser Plasmonic Microwelding of Oxide-Semiconductor Interconnects
    Hu, Yifan
    Lin, Luchan
    Xu, Jiayi
    Hu, Siyuan
    Ji, Junde
    Wu, Weiqing
    Zuo, Xinde
    Zhang, Qianyi
    Li, Zhuguo
    SMALL METHODS, 2024, 8 (07)
  • [33] Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes
    Chang-Liao, Kuei-Shu
    Hwu, Jenn-Gwo
    Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (5 B):
  • [34] Doping effect on structures and properties of metal oxide semiconductor nanomaterials
    Li, Zhihai
    Riley, Andrew
    Hosseini, Seyyedamirhossein
    Zubkov, Tykhon
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2019, 257
  • [35] DYNAMIC VOLT-CAPACITANCE CHARACTERISTIC MEASUREMENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES.
    Samokhvalov, M.K.
    Novichkov, V.V.
    Sverdlova, A.M.
    Instruments and Experimental Techniques (English Translation of Pribory I Tekhnika Eksperimenta), 1977, 20 (2 pt 2): : 559 - 561
  • [36] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    GROVE, AS
    SAH, CT
    SNOW, EH
    DEAL, BE
    JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2458 - &
  • [37] EFFECTS ON INTERFACE BARRIER ENERGIES OF METAL-ALUMINUM OXIDE-SEMICONDUCTOR (MAS) STRUCTURES AS A FUNCTION OF METAL ELECTRODE MATERIAL, CHARGE TRAPPING, AND ANNEALING
    DIMARIA, DJ
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5454 - 5456
  • [38] TRANSITION PROCESSES IN MNOP (METAL-SILICON NITRIDE SILICON OXIDE-SEMICONDUCTOR) STRUCTURES AND THEIR RELATION WITH THE INSTABILITY OF ELECTRIC CHARACTERISTICS OF DEVICES
    AGAFONOV, AI
    PLOTNIKOV, AF
    SELEZNEV, VN
    ZHURNAL TEKHNICHESKOI FIZIKI, 1983, 53 (06): : 1089 - 1095
  • [39] EFFECT OF STARTING OXIDE ON ELECTRICAL CHARACTERISTICS OF METAL-REOXIDIZED NITRIDED OXIDE-SEMICONDUCTOR DEVICES PREPARED BY RAPID THERMAL-PROCESSES
    KUEISHU
    CHANGLIAO
    HWU, JG
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B): : L600 - L603
  • [40] Quantum transport simulation of ultrathin and ultrashort silicon-on-insulator metal oxide-semiconductor field-effect transistors
    Tsuchiya, H
    Horino, M
    Ogawa, M
    Miyoshi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (12): : 7238 - 7243
12345