Effect of axial pressure on the capacitance of metal-tunneling-transparent oxide-semiconductor structures

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[21] PHOTOELECTRIC EFFECT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05): : 599 - 603
[22] EFFECT OF SURFACE ELECTRIC-FIELD ON THE GATE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES OF TERNARY SEMICONDUCTORS
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[23] Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate
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[24] MEASUREMENT OF CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL - OXIDE - SEMICONDUCTOR STRUCTURES BY PULSE METHOD
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[25] DYNAMIC VOLT-CAPACITANCE CHARACTERISTIC MEASUREMENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
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[26] HIGH-FREQUENCY CAPACITANCE BEHAVIOR OF METAL-OXIDE-SEMICONDUCTOR TUNNEL STRUCTURES
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[29] Effect of an inhomogeneous insulating film on the capacitance of metal-insulator-semiconductor structures
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[30] DEGRADATION OF METAL-OXIDE SEMICONDUCTOR STRUCTURES BY FOWLER-NORDHEIM TUNNELING INJECTION
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