Effect of axial pressure on the capacitance of metal-tunneling-transparent oxide-semiconductor structures

被引:0
|
作者
机构
来源
| 1600年 / 31期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] AXIAL PRESSURE EFFECT ON THE CAPACITY OF STRUCTURES METAL TUNNEL-TRANSPARENT OXIDE SEMICONDUCTOR
    KANCHUKOVSKII, OP
    PRESNOV, VA
    FASTYKOVSKII, PP
    SHENKEVICH, AL
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1988, 31 (09): : 65 - 69
  • [2] TUNNELING SPECTROSCOPY POSSIBILITIES IN METAL OXIDE-SEMICONDUCTOR DEVICES WITH A VERY THIN OXIDE BARRIER
    SALACE, G
    PATAT, JM
    THIN SOLID FILMS, 1992, 207 (1-2) : 213 - 219
  • [3] POSITRON STUDIES OF OXIDE-SEMICONDUCTOR STRUCTURES
    UEDONO, A
    WEI, L
    KAWANO, T
    TANIGAWA, S
    SUZUKI, R
    OHGAKI, H
    MIKADO, T
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C1): : 49 - 56
  • [4] Effect of air humidity on the metal-oxide-semiconductor tunnel structures' capacitance
    Fastykovsky, PP
    Mogilnitsky, AA
    SENSORS AND ACTUATORS B-CHEMICAL, 1999, 57 (1-3) : 51 - 55
  • [5] ON THE CAPACITANCE OF METAL THIN OXIDE SEMICONDUCTOR STRUCTURES WITH LOCALIZED OXIDE STATES
    NANNINI, A
    BAGNOLI, PE
    SOLID-STATE ELECTRONICS, 1989, 32 (04) : 337 - 338
  • [6] Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures
    Aziz, A
    Kassmi, K
    Maimouni, R
    Olivié, F
    Sarrabayrouse, G
    Martinez, A
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2005, 31 (03): : 169 - 178
  • [7] Photon Induced Negative Capacitance in Metal Oxide Semiconductor Structures
    Roudsari, A. Fadavi
    Khodadad, I.
    Saini, S. S.
    Anantram, M. P.
    2015 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC), 2015,
  • [8] Photon-Induced Negative Capacitance in Metal Oxide Semiconductor Structures
    Roudsari, Anita Fadavi
    Khodadad, Iman
    Saini, Simarjeet Singh
    Anantram, M. P.
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2016, 15 (05) : 715 - 719
  • [9] A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    HUNG, KK
    KO, PK
    HU, CM
    CHENG, YC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 654 - 665
  • [10] 2 COMPONENTS OF TUNNELING CURRENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    EITAN, B
    KOLODNY, A
    APPLIED PHYSICS LETTERS, 1983, 43 (01) : 106 - 108