SPUTTERED SILICON PROCESS FOR TRENCH ISOLATION.

被引：0
|
作者：
Anon
机构：
来源：
IBM technical disclosure bulletin | 1985年 / 27卷 / 10 A期
关键词：
SEMICONDUCTING SILICON - SPUTTERING;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The use of a deep trench isolation between individual devices on a masterslice leads to significant improvements in performance, density and reliability. This article discloses a means for effecting deep trench isolation properties in a silicon substrate by the use of an ion beam gun sputtering system.
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页码：5497 / 5498
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