Comparison of Strain Relaxation in Si/SiGe/Si Heterostructures after Annealing in Oxidizing and Inert Atmospheres

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作者：
Kuznetsov, A.Yu.
Radamson, H.H.
Svensson, B.G.
Ni, W.-X.
Hansson, G.V.
Nylandsted, Larsen, A.
机构：
[1] Royal Institute of Technology, Solid State Electronics, Electrum 229, SE-164 40, Kista-Stockholm, Sweden
[2] Royal Institute of Technology, Semiconductor Laboratory, Electrum 229, SE-164 40, Kista-Stockholm, Sweden
[3] Dept. of Phys. and Msrmt. Technology, Linköping University, SE-581 83 Linköping, Sweden
[4] Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus, Denmark
[5] Inst. of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, 142432, Russia
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Physica Scripta T | / 79卷
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