Comparison of Strain Relaxation in Si/SiGe/Si Heterostructures after Annealing in Oxidizing and Inert Atmospheres

被引：0
|
作者：
Kuznetsov, A.Yu.
Radamson, H.H.
Svensson, B.G.
Ni, W.-X.
Hansson, G.V.
Nylandsted, Larsen, A.
机构：
[1] Royal Institute of Technology, Solid State Electronics, Electrum 229, SE-164 40, Kista-Stockholm, Sweden
[2] Royal Institute of Technology, Semiconductor Laboratory, Electrum 229, SE-164 40, Kista-Stockholm, Sweden
[3] Dept. of Phys. and Msrmt. Technology, Linköping University, SE-581 83 Linköping, Sweden
[4] Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus, Denmark
[5] Inst. of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, 142432, Russia
来源：
Physica Scripta T | / 79卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：202 / 205
相关论文
共 50 条
  • [21] Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions
    Avrutin, VS
    Izyumskaya, NF
    Vyatkin, AF
    Zinenko, VI
    Agafonov, YA
    Irzhak, DV
    Roshchupkin, DV
    Steinman, EA
    Vdovin, VI
    Yugova, TG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 100 (01): : 35 - 39
  • [22] Solid phase recrystallization and strain relaxation in ion-implanted strained si on SiGe heterostructures
    Phen, MS
    Crosby, RT
    Craciun, V
    Jones, KS
    Law, ME
    Hansen, JL
    Larsen, AN
    Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices, 2005, 864 : 369 - 375
  • [23] Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures
    Dong, Yuanwei
    Mooney, Patricia M.
    Cai, Feiyang
    Anjum, Dalaver
    Ur-Rehman, Naeem
    Zhang, Xixiang
    Xia, Guangrui
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (10) : P302 - P309
  • [24] Thermally induced strain relaxation in SiGe/Si heterostructures with low-temperature buffer layers
    Vdovin, VI
    Yugova, TG
    Rzaev, MM
    Schäffler, F
    Mil'vidskii, MG
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 6, 2005, 2 (06): : 1938 - 1942
  • [25] STRAIN RELAXATION KINETICS IN SI1-XGEX/SI HETEROSTRUCTURES
    HOUGHTON, DC
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) : 2136 - 2151
  • [26] STRAIN RELAXATION KINETICS IN SI1-XGEX/SI HETEROSTRUCTURES
    HAUENSTEIN, RJ
    CLEMENS, BM
    MILES, RH
    MARSH, OJ
    CROKE, ET
    MCGILL, TC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 767 - 774
  • [27] Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures after Si+ ion implantation
    Holländer, B
    Buca, D
    Mörschbächer, M
    Lenk, S
    Mantl, S
    Herzog, HJ
    Hackbarth, T
    Loo, R
    Caymax, M
    Fichtner, PFP
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (03) : 1745 - 1747
  • [28] The effect of compound composition and strain on vacancies in Si/SiGe heterostructures
    Ganchenkova, MG
    Borodin, VA
    Nicolaysen, S
    Nieminen, RM
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 2005, 108-109 : 457 - 462
  • [29] SI/SIGE HETEROSTRUCTURES AND DEVICES
    ZHOU, GL
    MORKOC, H
    THIN SOLID FILMS, 1993, 231 (1-2) : 125 - 142
  • [30] EFFECT OF RAPID THERMAL ANNEALING ON THE PHOTOLUMINESCENCE PROPERTIES OF SIGE/SI HETEROSTRUCTURES
    SOUIFI, A
    BENYATTOU, T
    GUILLOT, G
    BREMOND, G
    DUTARTRE, D
    WARREN, P
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 4039 - 4045
12345