Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation

被引：0
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作者：
Lee, Woosung [1 ]
Lee, Seungho [1 ]
Ahn, Taejeong [1 ]
Hwang, Hyunsang [1 ]
机构：
[1] Kwangju Inst of Science and, Technology, Kwangju, Korea, Republic of
来源：
Annual Proceedings - Reliability Physics (Symposium) | 1999年
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页码：259 / 262
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