Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation

被引：0
|
作者：
Lee, Woosung [1 ]
Lee, Seungho [1 ]
Ahn, Taejeong [1 ]
Hwang, Hyunsang [1 ]
机构：
[1] Kwangju Inst of Science and, Technology, Kwangju, Korea, Republic of
来源：
Annual Proceedings - Reliability Physics (Symposium) | 1999年
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：259 / 262
相关论文
共 50 条
  • [1] Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation
    Lee, W
    Lee, S
    Ahn, T
    Hwang, H
    1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL, 1999, : 259 - 262
  • [2] Hot carrier degradation for narrow width MOSFET with shallow trench isolation
    Lee, WS
    Hwang, HS
    MICROELECTRONICS RELIABILITY, 2000, 40 (01) : 49 - 56
  • [3] Modeling of stress and narrow-width effects in shallow trench isolation
    Borges, Ricardo
    SOLID STATE TECHNOLOGY, 2010, 53 (02) : 19 - +
  • [4] Trench isolation step-induced (TRISI) narrow width effect on MOSFET
    Kim, Y
    Sridhar, S
    Chatterjee, A
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (10) : 600 - 602
  • [5] Channel width dependence of hot-carrier induced degradation in shallow trench isolated pMOSFET's
    Ishimaru, K
    Chen, JF
    Hu, CM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (07) : 1532 - 1536
  • [6] Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's
    Chen, JF
    Ishimaru, K
    Hu, CM
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (09) : 332 - 334
  • [7] A new hot carrier degradation law for MOSFET lifetime prediction
    Marchand, B
    Ghibaudo, G
    Balestra, F
    Guegan, G
    Deleonibus, S
    MICROELECTRONICS AND RELIABILITY, 1998, 38 (6-8): : 1103 - 1107
  • [8] COMPARISON OF SHALLOW TRENCH AND LOCOS ISOLATION FOR HOT-CARRIER RESISTANCE
    DOYLE, BS
    OCONNOR, RS
    MISTRY, KR
    GRULA, GJ
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) : 673 - 675
  • [9] The role of shallow trench isolation on channel width noise scaling for narrow width CMOS and flash cells
    Lu, Yin-Lung Ryan
    Liao, Yu-Ching
    McMahon, William
    Lee, Yung-Huei
    Kung, Helen
    Fastow, Richard
    Ma, Sean
    2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM, 2008, : 85 - 86
  • [10] A novel shallow trench isolation technology to control inverse narrow width effect on CMOS transistors
    Kim, T
    Kim, J
    Om, J
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S861 - S864
12345