Drastic improvements of gate oxide reliability by argon annealing compared with hydrogen annealing

被引：0
|
作者：
Fujitsu Ltd, Kawasaki, Japan [1 ]
机构：
来源：
J Electrochem Soc | / 10卷 / 3628-3631期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Impact of Argon-ambient Annealing in Hafnium Oxide Resistive Random Access Memory
    Capulong, Jihan O.
    Briggs, Benjamin D.
    Cady, Nathaniel C.
    2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2014, : 113 - +
  • [32] Improved indium oxide transparent conductive thin films by hydrogen annealing
    Yao, Zhirong
    Li, Shenghao
    Cai, Lun
    Wang, Xuemeng
    Gao, Bing
    Qiu, Kaifu
    Wu, Weiliang
    Shen, Hui
    MATERIALS LETTERS, 2017, 208 : 107 - 110
  • [33] Effect of hydrogen annealing on structure and dielectric properties of zinc oxide nanoparticles
    Ahmad, Md Parvez
    Rao, A. Venkateswara
    Babu, K. Suresh
    Rao, G. Narsinga
    MATERIALS CHEMISTRY AND PHYSICS, 2020, 243
  • [34] High Pressure Hydrogen Annealing Effect of CESL Nitride Stressor MOSFETs with Metal Gate/High-k Dielectric on the Performance and Reliability
    Park, Min Sang
    Lee, Kyong Taek
    Hong, Seung Ho
    Song, Seung Hyun
    Choi, Gil Bok
    Baek, Rock Hyun
    Choi, Hyun Sik
    Sagong, Hyun Chul
    Jung, Sung Woo
    Kang, Chang Yong
    Woo, B.
    Jeong, Yoon-Ha
    2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE, 2009, : 229 - +
  • [35] Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM
    Song, Jeonghwan
    Lee, Daeseok
    Woo, Jiyong
    Cha, Euijun
    Lee, Sangheon
    Hwang, Hyunsang
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (05) : 4758 - 4761
  • [36] Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-face
    Harada, Shinsuke
    Kato, Makoto
    Ito, Sachiko
    Suzuki, Kenji
    Ohyanagi, Takasumi
    Senzaki, Junji
    Fukuda, Kenji
    Okumura, Hajime
    Arai, Kazuo
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 549 - 552
  • [37] Effect of Thermal Annealing on the GaN Metal-Oxide-Semiconductor Capacitors with Gallium Oxide Gate Layer
    Lee, Ming-Lun
    Mue, T. S.
    Sheu, J. K.
    Chang, K. H.
    Tu, S. J.
    Hsueh, T. H.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (11) : H1019 - H1022
  • [38] Influence of post-implantation annealing temperature on MOSFET performance and oxide reliability
    Grieb, Michael
    Noll, Stefan
    Scholten, Dick
    Rambach, Martin
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 703 - 706
  • [39] On the Argon annealing-based improvements of the properties of ultra-thin oxynitrides nitrided with NH3
    Dasgupta, A
    Takoudis, CG
    Martel, G
    SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, 2002, 716 : 177 - 182
  • [40] Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H-SiC metal-oxide-semiconductor capacitors
    Cho, W
    Kosugi, R
    Fukuda, K
    Arai, K
    Suzuki, S
    APPLIED PHYSICS LETTERS, 2000, 77 (08) : 1215 - 1217
12345