Drastic improvements of gate oxide reliability by argon annealing compared with hydrogen annealing

被引：0
|
作者：
Fujitsu Ltd, Kawasaki, Japan [1 ]
机构：
来源：
J Electrochem Soc | / 10卷 / 3628-3631期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Influence of annealing in argon on properties of Al-doped zinc oxide films
    School of Material Science and Engineering, Hefei University of Technology, Hefei 230009, China
    Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment, 2007, 28 (04): : 46 - 50
  • [22] Effect of annealing in argon on the properties of thermally deposited gallium-oxide films
    Kalygina, V. M.
    Vishnikina, V. V.
    Zarubin, A. N.
    Novikov, V. A.
    Petrova, Yu. S.
    Tolbanov, O. P.
    Tyazhev, A. V.
    Tcupiy, S. Y.
    Yaskevich, T. M.
    SEMICONDUCTORS, 2013, 47 (08) : 1130 - 1136
  • [23] Effect of annealing in argon on the properties of thermally deposited gallium-oxide films
    V. M. Kalygina
    V. V. Vishnikina
    A. N. Zarubin
    V. A. Novikov
    Yu. S. Petrova
    O. P. Tolbanov
    A. V. Tyazhev
    S. Y. Tcupiy
    T. M. Yaskevich
    Semiconductors, 2013, 47 : 1130 - 1136
  • [24] Graphene oxide film reduction using atomic hydrogen annealing
    Heya, Akira
    Matsuo, Naoto
    THIN SOLID FILMS, 2017, 625 : 93 - 99
  • [25] Influence of hydrogen annealing on the properties of hafnium oxide thin films
    Al-Kuhaili, M. F.
    Durrani, S. M. A.
    Bakhtiari, I. A.
    Dastageer, M. A.
    Mekki, M. B.
    MATERIALS CHEMISTRY AND PHYSICS, 2011, 126 (03) : 515 - 523
  • [26] Surface Cleaning and Modification of Oxide Films by Atomic Hydrogen Annealing
    Heya, Akira
    Sumitomo, Koji
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2022, 35 (04) : 351 - 357
  • [27] The quality of thin gate oxide was improved by plasma treatment and low temperature annealing
    Chao, C. W.
    Chang, M. Y.
    IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005, 2005, : 523 - 525
  • [28] Oxide defect annihilation generation following high temperature annealing: A gate oxide integrity evaluation
    Tamatsuka, M
    Sasaki, T
    Hagimoto, K
    Rozgonyi, GA
    ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY, 1997, 1997 (03): : 183 - 194
  • [29] Annealing behavior of gate oxide leakage current after quasi-breakdown
    Xu, Z
    Cho, BJ
    Li, MF
    MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) : 1341 - 1346
  • [30] Ar annealing for suppression of gate oxide thinning at shallow trench isolation edge
    Ohashi, Takuo
    Kubota, Taishi
    Nakajima, Anri
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (07) : 562 - 564
12345