Drastic improvements of gate oxide reliability by argon annealing compared with hydrogen annealing

被引：0
|
作者：
Fujitsu Ltd, Kawasaki, Japan [1 ]
机构：
来源：
J Electrochem Soc | / 10卷 / 3628-3631期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Drastic improvements of gate oxide reliability by argon annealing compared with hydrogen annealing
    Yamada, N
    Yamada-Kaneta, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (10) : 3628 - 3631
  • [2] The effects of hydrogen annealing on gate oxide integrity of U-shaped trench MOSFET with 400 A gate oxide
    Wu, Chun-Tai
    Sharp, Joelle
    Madson, Gordon
    Michalowicz, Jerzy
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (10) : G916 - G921
  • [3] HYDROGEN ANNEALING OF TRANSPARENT GATE MOS DIODES
    TAKATO, H
    ISHII, K
    HAYASHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (11): : L1984 - L1986
  • [4] Improved reliability of low-temperature polysilicon TFT by post-annealing gate oxide
    Lee, SW
    Kim, E
    Han, SS
    Lee, HS
    Yun, DC
    Lim, KM
    Yang, MS
    Kim, CD
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (03) : 174 - 176
  • [5] Combined Effect of Rapid Thermal Annealing and Crystal Nature on the Gate Oxide Reliability of Czochralski Silicon
    Shin, Jung-Won
    Lee, Woo-Sung
    Lee, Anselmo Jaehyeong
    Kim, Ja-Young
    Kang, Hee-bog
    Lee, Sung-Wook
    HIGH PURITY AND HIGH MOBILITY SEMICONDUCTORS 14, 2016, 75 (04): : 77 - 80
  • [6] Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs
    Changxi Chen
    Quan Wang
    Wei Li
    Qian Wang
    Chun Feng
    Lijuan Jiang
    Hongling Xiao
    Xiaoliang Wang
    Journal of Semiconductors, 2021, (09) : 70 - 75
  • [7] Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs
    Chen, Changxi
    Wang, Quan
    Li, Wei
    Wang, Qian
    Feng, Chun
    Jiang, Lijuan
    Xiao, Hongling
    Wang, Xiaoliang
    JOURNAL OF SEMICONDUCTORS, 2021, 42 (09)
  • [8] Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs
    Changxi Chen
    Quan Wang
    Wei Li
    Qian Wang
    Chun Feng
    Lijuan Jiang
    Hongling Xiao
    Xiaoliang Wang
    Journal of Semiconductors, 2021, 42 (09) : 70 - 75
  • [9] The effect of hydrogen annealing on oxygen precipitation behavior and gate oxide integrity in Czochralski Si wafers
    Abe, H
    Suzuki, I
    Koya, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (01) : 306 - 311
  • [10] The effect of hydrogen annealing on oxygen precipitation behavior and gate oxide integrity in Czochralski Si wafers
    Izunome, K
    Shirai, H
    Kashima, K
    Yoshikawa, J
    Hojo, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (10) : 3695 - 3695
12345