共 50 条
- [42] High performance buried heterostructure lambda=1.5 mu m InGaAs/AlGaInAs strained-layer quantum well laser diodes 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 765 - 768
- [43] High-performance strain-compensated multiple quantum well planar buried heterostructure laser diodes with low leakage current JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (03): : 1751 - 1757
- [46] High power single-mode (λ=1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures Semiconductors, 2002, 36 : 1308 - 1314
- [47] Comparison of 1.3-μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes with/without GaInAsP and AlGaInAs graded-composition layers JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (12B): : L1507 - L1508
- [48] Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers 2003, Japan Society of Applied Physics (42):
- [49] 1.48 MU-M HIGH-POWER MULTIPLE-QUANTUM-WELL LASER-DIODES NEC RESEARCH & DEVELOPMENT, 1992, 33 (03): : 365 - 371