首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
High quantum efficiency, high output power 1.3 μm GaInAsP buried GRaded-INdex Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) laser diodes
被引:0
|
作者
:
机构
:
[1]
Kasukawa, Akihiko
[2]
Murgatroyd, Ian John
[3]
Imajo, Yoshihiro
[4]
Matsumoto, Narihito
[5]
Fukishima, Toru
[6]
Okamoto, Hiroshi
[7]
Kashiwa, Susumu
来源
:
Kasukawa, Akihiko
|
1600年
/ 28期
关键词
:
D O I
:
暂无
中图分类号
:
学科分类号
:
摘要
:
引用
收藏
相关论文
共 50 条
[21]
Growth and optimization of extremely high-pulse-power graded-index separate confinement heterostructure quantum well AlGaAs/InGaAs diode lasers with broadened waveguides
J. Z. Li
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corporation,
J. Z. Li
R. U. Martinelli
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corporation,
R. U. Martinelli
V. B. Khalfin
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corporation,
V. B. Khalfin
Z. Shellenbarger
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corporation,
Z. Shellenbarger
A. M. Braun
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corporation,
A. M. Braun
D. Capewell
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corporation,
D. Capewell
B. I. Willner
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corporation,
B. I. Willner
J. H. Abeles
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corporation,
J. H. Abeles
Journal of Electronic Materials,
2005,
34
: 156
-
160
[22]
Growth and optimization of extremely high-pulse-power graded-index separate confinement heterostructure quantum well AlGaAs/InGaAs diode lasers with broadened waveguides
Li, JZ
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corp, Princeton, NJ 08543 USA
Sarnoff Corp, Princeton, NJ 08543 USA
Li, JZ
Martinelli, RU
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corp, Princeton, NJ 08543 USA
Sarnoff Corp, Princeton, NJ 08543 USA
Martinelli, RU
Khalfin, VB
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corp, Princeton, NJ 08543 USA
Sarnoff Corp, Princeton, NJ 08543 USA
Khalfin, VB
Shellenbarger, Z
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corp, Princeton, NJ 08543 USA
Sarnoff Corp, Princeton, NJ 08543 USA
Shellenbarger, Z
Braun, AM
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corp, Princeton, NJ 08543 USA
Sarnoff Corp, Princeton, NJ 08543 USA
Braun, AM
Capewell, D
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corp, Princeton, NJ 08543 USA
Sarnoff Corp, Princeton, NJ 08543 USA
Capewell, D
Willner, BI
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corp, Princeton, NJ 08543 USA
Sarnoff Corp, Princeton, NJ 08543 USA
Willner, BI
Abeles, JH
论文数:
0
引用数:
0
h-index:
0
机构:
Sarnoff Corp, Princeton, NJ 08543 USA
Sarnoff Corp, Princeton, NJ 08543 USA
Abeles, JH
JOURNAL OF ELECTRONIC MATERIALS,
2005,
34
(02)
: 156
-
160
[23]
HIGH-EFFICIENCY SUPERLATTICE GRADED-INDEX SEPARATE CONFINING HETEROSTRUCTURE LASERS WITH ALGAAS SINGLE QUANTUM WELLS
SHEALY, JR
论文数:
0
引用数:
0
h-index:
0
SHEALY, JR
APPLIED PHYSICS LETTERS,
1988,
52
(18)
: 1455
-
1457
[24]
HIGH-TEMPERATURE OPERATION OF PERIODIC INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE QUANTUM-WELL LASER
CHEN, YK
论文数:
0
引用数:
0
h-index:
0
CHEN, YK
WU, MC
论文数:
0
引用数:
0
h-index:
0
WU, MC
HOBSON, WS
论文数:
0
引用数:
0
h-index:
0
HOBSON, WS
CHIN, MA
论文数:
0
引用数:
0
h-index:
0
CHIN, MA
CHOQUETTE, KD
论文数:
0
引用数:
0
h-index:
0
CHOQUETTE, KD
FREUND, RS
论文数:
0
引用数:
0
h-index:
0
FREUND, RS
SERGENT, AM
论文数:
0
引用数:
0
h-index:
0
SERGENT, AM
APPLIED PHYSICS LETTERS,
1991,
59
(22)
: 2784
-
2786
[25]
Design and fabrication of low-threshold 1.55-mu m graded-index separate-confinement heterostructure strained InGaAsP single-quantum-well laser diodes
Yamamoto, N
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Opto-electronics Laboratories
Yamamoto, N
Yokoyama, K
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Opto-electronics Laboratories
Yokoyama, K
Yamanaka, T
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Opto-electronics Laboratories
Yamanaka, T
Yamamoto, M
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Opto-electronics Laboratories
Yamamoto, M
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1997,
33
(07)
: 1141
-
1148
[26]
LOW THRESHOLD CURRENT-DENSITY 1.5 MU-M GAINAS/AIGAINAS GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE QUANTUM-WELL LASER-DIODES GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
KASUKAWA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama
KASUKAWA, A
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama
BHAT, R
ZAH, CE
论文数:
0
引用数:
0
h-index:
0
机构:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama
ZAH, CE
SCHWARZ, SA
论文数:
0
引用数:
0
h-index:
0
机构:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama
SCHWARZ, SA
HWANG, DM
论文数:
0
引用数:
0
h-index:
0
机构:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama
HWANG, DM
KOZA, MA
论文数:
0
引用数:
0
h-index:
0
机构:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama
KOZA, MA
LEE, TP
论文数:
0
引用数:
0
h-index:
0
机构:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama
LEE, TP
ELECTRONICS LETTERS,
1991,
27
(12)
: 1063
-
1065
[27]
VERY LOW THRESHOLD CURRENT-DENSITY 1.5 MU-M GAINAS/ALGAINAS GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE STRAINED QUANTUM-WELL LASER-DIODES GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
KASUKAWA, A
论文数:
0
引用数:
0
h-index:
0
KASUKAWA, A
BHAT, R
论文数:
0
引用数:
0
h-index:
0
BHAT, R
ZAH, CE
论文数:
0
引用数:
0
h-index:
0
ZAH, CE
KOZA, MA
论文数:
0
引用数:
0
h-index:
0
KOZA, MA
LEE, TP
论文数:
0
引用数:
0
h-index:
0
LEE, TP
APPLIED PHYSICS LETTERS,
1991,
59
(20)
: 2486
-
2488
[28]
HIGH-POWER OUTPUT 1.48-1.51 MU-M CONTINUOUSLY GRADED INDEX SEPARATE CONFINEMENT STRAINED QUANTUM-WELL LASERS
TANBUNEK, T
论文数:
0
引用数:
0
h-index:
0
TANBUNEK, T
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
OLSSON, NA
论文数:
0
引用数:
0
h-index:
0
OLSSON, NA
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
SERGENT, AM
论文数:
0
引用数:
0
h-index:
0
SERGENT, AM
WECHT, KW
论文数:
0
引用数:
0
h-index:
0
WECHT, KW
APPLIED PHYSICS LETTERS,
1990,
57
(03)
: 224
-
226
[29]
TEMPERATURE-DEPENDENCE OF OPTICAL GAIN, QUANTUM EFFICIENCY, AND THRESHOLD CURRENT IN GAAS/GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE SINGLE-QUANTUM-WELL LASERS
ZHU, LD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
ZHU, LD
ZHENG, BZ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
ZHENG, BZ
FEAK, GAB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
FEAK, GAB
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1989,
25
(09)
: 2007
-
2012
[30]
PRELIMINARY RELIABILITY STUDIES OF 1.55-MU-M GRADED INDEX SEPARATE CONFINEMENT BURIED HETEROSTRUCTURE (GRINSCH) MULTIPLE QUANTUM-WELL (MQW) LASERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY (MOVPE)
REDSTALL, RM
论文数:
0
引用数:
0
h-index:
0
机构:
British Telecom Research Laboratories, Ipswich
REDSTALL, RM
SKEATS, AP
论文数:
0
引用数:
0
h-index:
0
机构:
British Telecom Research Laboratories, Ipswich
SKEATS, AP
COOPER, DM
论文数:
0
引用数:
0
h-index:
0
机构:
British Telecom Research Laboratories, Ipswich
COOPER, DM
BURNESS, AL
论文数:
0
引用数:
0
h-index:
0
机构:
British Telecom Research Laboratories, Ipswich
BURNESS, AL
ELECTRONICS LETTERS,
1990,
26
(15)
: 1132
-
1133
←
1
2
3
4
5
→