High quantum efficiency, high output power 1.3 μm GaInAsP buried GRaded-INdex Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) laser diodes

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[1] Kasukawa, Akihiko

[2] Murgatroyd, Ian John

[3] Imajo, Yoshihiro

[4] Matsumoto, Narihito

[5] Fukishima, Toru

[6] Okamoto, Hiroshi

[7] Kashiwa, Susumu

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Kasukawa, Akihiko | 1600年 / 28期

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[1] HIGH QUANTUM EFFICIENCY, HIGH OUTPUT POWER 1.3 MU-M GAINASP BURIED GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE MULTIPLE QUANTUM WELL (GRIN-SCH-MQW) LASER-DIODES
KASUKAWA, A
MURGATROYD, IJ
IMAJO, Y
MATSUMOTO, N
FUKUSHIMA, T
OKAMOTO, H
KASHIWA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04): : L661 - L663
[2] 1.48-MU-M HIGH-POWER GAINASP-INP GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE MULTIPLE-QUANTUM-WELL LASER-DIODES
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[3] 1.5-MU-M GAINAS/GAINASP GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE MULTIPLE QUANTUM WELL (GRIN-SCH-MQW) LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
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[4] STATIC CHARACTERISTICS OF GAINASP INP GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE QUANTUM-WELL LASER-DIODES (GRIN-SCH QW LDS) GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
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[5] HIGH OUTPUT POWER SINGLE LONGITUDINAL MODE GRADED INDEX SEPARATE CONFINEMENT MULTIPLE QUANTUM-WELL INGAAS INP DISTRIBUTED FEEDBACK (GRIN SCH MQW DFB) LASERS
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[6] 1.3 MU-M GAINASP-INP BURIED HETEROSTRUCTURE GRADED INDEX SEPARATE CONFINEMENT MULTIPLE QUANTUM WELL (BH-GRIN-SC-MQW) LASERS ENTIRELY GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
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[7] Self-consistent simulation on the modal gain of graded-index separate-confinement-heterostructure quantum-well lasers
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[8] Self-consistent simulation on the modal gain of graded-index separate-confinement-heterostructure quantum-well lasers
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K.C. Feng
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[9] HIGH-POWER 1.5-MU-M ALL-MOVPE BURIED HETEROSTRUCTURE GRADED INDEX SEPARATE CONFINEMENT MULTIPLE QUANTUM WELL LASERS
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[10] 1.5-MU-M GAINAS/ALGAINAS GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE QUANTUM-WELL LASER-DIODES GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
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