Sub-1.3 nm amorphous tantalum pentoxide gate dielectrics for damascene metal gate transistors

被引：0

作者：

Inumiya, Seiji ^{[1
]}

Yagishita, Atsushi ^{[1
]}

Saito, Tomohiro ^{[1
]}

Hotta, Masaki ^{[1
]}

Ozawa, Yoshio ^{[1
]}

Suguro, Kyoichi ^{[1
]}

Tsunashima, Yoshitaka ^{[1
]}

Arikado, Tsunetoshi ^{[1
]}

机构：

[1] Microlectron. Engineering Laboratory, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

来源：

| 1600年 / JJAP, Tokyo, Japan卷 / 39期

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