Model for visible photon emission from reverse-biased silicon p-n junctions

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Appl Phys Lett | / 4卷 / 470期

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[21] PREDOMINANT ROLE OF SURFACE FILMS IN EMISSION OF ELECTRONS FROM REVERSE-BIASED P-N-JUNCTIONS IN SILICON-CARBIDE
WIDDOWSON, AE
ROSE, FWG
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (03): : 437 - 449
[22] ELECTRO-OPTIC AND WAVEGUIDE PROPERTIES OF REVERSE-BIASED GALLIUM PHOSPHIDE P-N JUNCTIONS
REINHART, FK
NELSON, DF
MCKENNA, J
PHYSICAL REVIEW, 1969, 177 (03): : 1208 - +
[23] Modeling the tunnelling current in reverse-biased p/n junctions
1600, (33):
[24] PHOTOCAPACITANCE EFFECT IN REVERSE-BIASED P-N-JUNCTIONS
MARMUR, IY
NOVIKOV, YB
OKSMAN, YA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 54 - 57
[25] INVESTIGATION OF LOW FREQUENCY NOISE OF 1/F TYPE IN REVERSE-BIASED P-N JUNCTIONS
GUDKOV, ID
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (05): : 880 - &
[26] MODELING THE TUNNELING CURRENT IN REVERSE-BIASED P/N JUNCTIONS
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SOLID-STATE ELECTRONICS, 1990, 33 (07) : 971 - 972
[27] CURRENT DEPENDENCE OF DEPLETION-LAYER CAPACITANCE OF REVERSE-BIASED P-N JUNCTIONS ( T/E )
COLLARD, JR
STERZER, F
APPLIED PHYSICS LETTERS, 1964, 5 (08) : 165 - &
[28] Electron microscopy of reverse biased p-n junctions
Beleggia, M
Cristofori, D
Merli, PG
Pozzi, G
MICRON, 2000, 31 (03) : 231 - 236
[29] ON THE MODELING OF TUNNELLING CURRENTS IN REVERSE-BIASED P-N-JUNCTIONS
HURKX, GAM
SOLID-STATE ELECTRONICS, 1989, 32 (08) : 665 - 668
[30] Ultrabroadband emission spectrum from a reverse-biased 4H-SiC p-n junction diode
Ono, S
Arai, M
Kimura, C
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (10): : 7107 - 7108

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