ON THE MODELING OF TUNNELLING CURRENTS IN REVERSE-BIASED P-N-JUNCTIONS

被引：77

|

作者：

HURKX, GAM

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 08期

关键词：

D O I：

10.1016/0038-1101(89)90146-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：665 / 668

页数：4

相关论文

共 50 条

[1] Modeling the tunnelling current in reverse-biased p/n junctions
1600, (33):
[2] FLUCTUATION MECHANISM OF EXCESS TUNNEL CURRENTS IN REVERSE-BIASED P-N-JUNCTIONS
RAIKH, ME
RUZIN, IM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (07): : 745 - 750
[3] PHOTOCAPACITANCE EFFECT IN REVERSE-BIASED P-N-JUNCTIONS
MARMUR, IY
NOVIKOV, YB
OKSMAN, YA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 54 - 57
[4] SUPER-POISSON NOISE IN REVERSE-BIASED P-N-JUNCTIONS
NEUSTROEV, LN
OSIPOV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (02): : 171 - 174
[5] INDUCED PERMANENT NEGATIVE RESISTANCES IN REVERSE-BIASED P-N-JUNCTIONS
POOKAIYAUDOM, S
INTERNATIONAL JOURNAL OF ELECTRONICS, 1978, 44 (03) : 329 - 332
[6] INTERPRETATION OF ELECTRON INTERFERENCE IMAGES OF REVERSE-BIASED P-N-JUNCTIONS
POZZI, G
VANZI, M
OPTIK, 1982, 60 (02): : 175 - 180
[7] IMAGE SIMULATION OF HOLOGRAPHIC CONTOUR MAPS OF REVERSE-BIASED P-N-JUNCTIONS
MATTEUCCI, G
MIGLIORI, A
POZZI, G
VANZI, M
EUREM 88, VOLS 1-3: TUTORIALS, INSTRUMENTATION AND TECHNIQUES / PHYSICS AND MATERIALS / BIOLOGY, 1988, 93 : 195 - 196
[8] IMAGE SIMULATION OF HOLOGRAPHIC CONTOUR MAPS OF REVERSE-BIASED P-N-JUNCTIONS
MATTEUCCI, G
MIGLIORI, A
POZZI, G
VANZI, M
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1988, (93): : 195 - 196
[9] PHOTON-EMISSION FROM REVERSE-BIASED SILICON P-N-JUNCTIONS
GAUTAM, DK
KHOKLE, WS
GARG, KB
SOLID-STATE ELECTRONICS, 1988, 31 (02) : 219 - 222
[10] MODELING THE TUNNELING CURRENT IN REVERSE-BIASED P/N JUNCTIONS
LIOU, JJ
SOLID-STATE ELECTRONICS, 1990, 33 (07) : 971 - 972

← 1 2 3 4 5 →