Effect of strain compensation on crystalline quality for InGaAs/InAlP strained multiple quantum well structures on InP grown by gas-source molecular beam epitaxy

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[1] Naniwae, Kouichi
[2] Sugou, Shigeo
[3] Anan, Takayoshi
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Naniwae, Kouichi | 1600年 / Publ by JJAP, Minato-ku, Japan卷 / 33期
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Semiconductor quantum wells;
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